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Eur. Phys. J. Appl. Phys. 24, 171-188 (2003)
DOI: 10.1051/epjap:2003073-1
Breakdown voltage analysis of neutron irradiated silicon detectors
A. Bhardwaj1, K. Ranjan1, Namrata1, S. Chatterji1, A.K. Srivastava1, A. Kumar1, M.K. Jha1 and R.K. Shivpuri1, 21 Centre for Detector and Related Software Technology, University of Delhi, India
2 Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
cdrst@hepdelhi.com
(Received: 21 May 2002 / Received in final form: 11 January 2003 / Accepted: 15 July 2003 Published online: 3 October 2003)
Abstract
The very intense radiation environment of high luminosity future colliding beam
experiments (LHC, etc.) makes radiation hardness the most important issue for Si
detectors. The crucial question is whether the Si strip detectors can withstand the harsh
radiation environment for sufficiently long time (full LHC lifetime) and hence the central
issue concerning all LHC experiments is the breakdown performance of these detectors.
In this paper the simulations have been performed to analyze electrical parameters for the
most deleterious long-term effect of radiation: the change in effective charge carrier
concentration and resulting increase in full depletion bias. Detailed calculations using
Hamburg Model have allowed the parameterization of these effects, and helped to
simulate the operation scenario of Si detectors over 10 years of LHC operation. The
systematic studies of the electric field to get an insight into the device behavior provide,
for the first time, a possible explanation for the improvement in breakdown performance
with radiation. Simulation study is also carried on optimized guard ring structures to
study the change in guard voltage distribution after 10 years of neutron radiation damage.
29.40.-n - Radiation detectors.
29.40.Wk - Solid-state detectors.
© EDP Sciences 2003
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