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Issue Eur. Phys. J. Appl. Phys.
Volume 24, Number 3, December 2003
Page(s) 189 - 194
Section Structural and Functional Materials
DOI 10.1051/epjap:2003074
Published online 03 October 2003

Eur. Phys. J. Appl. Phys. 24, 189-194 (2003)
DOI: 10.1051/epjap:2003074

Influence of an applied electric field on the electronic properties of Si $\mathsf{\delta}$-doped GaAs

E. Ozturk1, Y. Ergun1, H. Sari1 and I. Sokmen2

1  Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
2  Dokuzeylul University, Department of Physics, Izmir, Turkey

eozturk@cumhuriyet.edu.tr

(Received: 27 February 2002 / Received in final form: 9 June 2003 / Accepted: 24 July 2003 Published online: 3 October 2003)

Abstract
We have theoretically studied the electronic structure of Si $\delta$-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence of the electric field on the donor distribution thickness as different from other authors. The present method is based on a self-consistent solution of the Schrödinger and Poisson equations. From our calculations, we have seen that a high applied electric field is significantly changed the subband structure of the $\delta$-doped GaAs and the change of the electronic properties as dependent on the applied electric field is more pronounced at wide doping thickness. The high electric fields can induce a spatial separation between confined electrons and ionized dopants in the $\delta$-doped GaAs structure resulting in enhanced free carrier mobility in semiconductor devices.

PACS
73.90.+f - Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73).

© EDP Sciences 2003


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