An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In Ga As (001)

Issue		Eur. Phys. J. Appl. Phys. Volume 21, Number 3, March 2003


Page(s)		179 - 185
Section		Characterization of Materials
DOI		10.1051/epjap:2003002
Published online		27 February 2003

Eur. Phys. J. AP 21, 179-185 (2003)
DOI: 10.1051/epjap:2003002

An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In $_\mathsf{0.5}$ Ga $_\mathsf{0.5}$ As (001)

F. Monteverde¹, A. Michel¹, A. Fnidiki² and J.-P. Eymery¹

¹ Laboratoire de Métallurgie Physique, UMR 6630 CNRS-Université de Poitiers, bâtiment SP2MI, Téléport 2, boulevard Marie et Pierre Curie, BP 30179, 86962 Futuroscope-Chasseneuil Cedex, France
² Groupe de Physique des Matériaux, UMR 6634 CNRS-Université de Rouen, Faculté des Sciences et des Techniques de Rouen, place Emile Blondel, 76821 Mont-Saint-Aignan Cedex, France

jpeymery@univ-poitiers.fr

(Received: 19 December 2001 / Received in final form: 22 October 2002 / Accepted: 14 November 2002 Published online: 27 February 2003 )

Abstract
Polycrystalline iron thin films on ion-etched monocrystalline In _0.5Ga _0.5As/InP (001) substrates were prepared using ion-beam sputtering deposition. The interface reaction was characterised by X-ray diffraction and conversion electron Mössbauer spectroscopy experiments, after annealing in vacuum for 1 h at temperatures between 350 and 450 °C. Interdiffusion phenomena mainly result in the formation of five new phases, namely metallic-In, InAs, Fe ₂As, Fe ₂In _xAs _1-x ( $0 \leq x \leq 0.2$ ) and Fe ₃Ga _2-xAs _x ( x = 0.2 - 0.3), in agreement with the predictions of the phase diagrams. InAs results from the decomposition of the semiconductor substrate and remains (001)-textured. The iron-arsenide grains grow into the substrate below the Fe/In _0.5Ga _0.5As interface. The In precipitates reach ~40 nm in size after 1 h annealing at 450 °C, while the Fe ₃Ga _2-xAs _x phase appears at 400-450 °C with an either textured or disordered structure. Finally, the overall activation energy for the thermal reaction is calculated to be 1.5 eV in the latter temperature range.

PACS
61.10.-i - X-ray diffraction and scattering.
68.35.-p - Solid surfaces and solid-solid interfaces: Structure and energetics.
76.80.+y - Mössbauer effect; other $\gamma$ -ray spectroscopy.

© EDP Sciences 2003

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