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DOI: 10.1051/epjap:2001103
Eur. Phys. J. AP 15, 117-121 (2001)
Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method
A. Poncet, C. Faugeras and M. MouisLaboratoire de Physique de la Matière (UMR-CNRS 5511) , INSA-Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne, France poncet@lpm.insa-lyon.fr
(Received: 20 November 2000 / Revised: 18 April 2001 / Accepted: 27 April 2001 )
Abstract
This paper presents a flexible numerical technique which is especially suited to analyze lateral
modulation of quantum effects in short channel MOS transistors. We discuss boundary conditions for
the Schr
dinger equation and the impact of the finite element meshing. We show how channel length
shortening alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum
approach.
85.30.De - Semiconductor-device characterization, design, and modeling.
02.70.Dh - Finite-element and Galerkin methods.
© EDP Sciences 2001
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