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DOI: 10.1051/epjap:2000139
Eur. Phys. J. AP 11, 3-8
The growth of boron doped (100) textured diamond films
by three-step
process
Chau-Shu Chen - Chi-Ling Chen - Juh-Tzeng Lue
Department of Physics, and Department of Electrical Engineering, National
Tsing Hua University, Hsinchu, Taiwan
jtlue@phys.nthu.edu.tw
Received: 22 September 1998 / Revised: 21 April 1999 / Accepted: 6 March 2000
Abstract
p-type (100) faceted diamond films can be successfully grown by bubbling
H2 through liquid B(OCH3)3 during the Microwave Plasma Enhanced
Chemical Vapour Deposition (MPCVD). Ramann spectra and scanning electron
micrographs (SEM) convincingly illustrate that diamond-film growth on
silicon substrates by a three-step process yields good uniformity with
preferential orientation. The field emission current density of the boron
doped diamond films can be enhanced from
A/cm2 for the as
grown films to
A/cm2
at an applied field of 20 V/
m
by hydrogenation treatment.
PACS
81.15.Gh Chemical vapor deposition
(including plasma-enhanced CVD,
MOCVD, etc.)
-
81.40.Tv Optical and dielectric properties
(related to treatment conditions)
-
68.55.Jk Structure
and morphology; thickness
Copyright EDP Sciences
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