A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet

Issue		Eur. Phys. J. Appl. Phys. Volume 5, Number 1, January 1999


Page(s)		1 - 2
DOI		10.1051/epjap:1999106

DOI: 10.1051/epjap:1999106

Eur. Phys. J. AP 5, 1-2

Rapid note

A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet

M.A. Grado-Caffaro - M. Grado-Caffaro

C/Julio Palacios, 11, 9B, 28029 Madrid, Spain

Received: 25 June 1998 / Revised and Accepted: 22 October 1998

Abstract
A sensitivity factor for electron mobility with respect to the tunnel oxide thickness in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a field-dependent mobility is assumed.

PACS
85.30.-z Semiconductor devices - 85.30.De Semiconductor-device characterization, design, and modeling - 85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

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