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DOI: 10.1051/epjap:1999114
Eur. Phys. J. AP 5, 91-94
Annealing of radiation damage in MOS devices:
Study
by diode parameter determination
E. Bendada1 - K. Raïs2
1 Département de Génie Électrique, Université My
Ismaïl-F.S.T, BP 509, Errachidia, Marocco
2 Laboratoire de Caractérisation
des Composants à Semiconducteurs, Université Chouaïb Doukkali,
BP
20, El Jadida, Marocco
Received: 21 November 1998 / Revised: 24 April 1998 / Accepted: 1st September 1998
Abstract
Previous modeling techniques of P-N junctions have been applied for studying the
annealing of Gamma-ray damage in power MOSFETs. The degradation of the physical
parameters of the body-drain junction for a dose rate of
103.8 rad/min is presented. Large
decrease of the reverse recombination current, of the series resistance and of the ideality
factor are shown to be related to the thermal anneal. These effects are discussed and explained
by the evolution of the radiation-induced defects.
PACS
73.40.Qv Metal insulator semiconductor
structures (including semiconductor-to-insulator) -
61.80.Ed
-ray effects -
73.20.-r Surface and interface electron
states
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