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DOI: 10.1051/epjap:1998254
Eur. Phys. J. AP 4, 149-156
Stacking faults and phase transformations in silicon nitride
X. Milhet - J.-L. Demenet - J. Rabier
Laboratoire de Métallurgie Physique
,
Université de Poitiers, UFR
Sciences, SP2MI, Boulevard 3, Téléport 2,
86960 Futuroscope
Cedex, France
Received: 22 December 1997 / Revised and Accepted: 29 June 1998
Abstract
From observations of extended dislocation nodes in
silicon nitride, possible stacking fault
structures in the basal plane of this compound have been
investigated. It has been found that
stacking fault structure is locally analogous to
silicon nitride. A phase transformation
to
or
to
can also be achieved
by cooperative shear of partial dislocations with
Burgers vectors.
PACS
61.72.Ff Direct observation of dislocations and
other defects (etch pits, decoration,
electron microscopy, x-ray
topography, etc.) -
61.50.Ks Crystallographic aspects of phase
transformations; pressure effects -
81.05.Je Ceramics and refractories (including
borides, carbides, hydrides, nitrides,
oxides, and silicides)
Author for correspondance: xavier.milhet@lmp.univ-poitiers.fr
Copyright EDP Sciences
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