Detection and characterization of stacking faults by light beam induced current mapping and scanning infrared microscopy in silicon

Issue		Eur. Phys. J. Appl. Phys. Volume 3, Number 2, August 1998


Page(s)		123 - 126
DOI		10.1051/epjap:1998214

DOI: 10.1051/epjap:1998214

Eur. Phys. J. AP 3, 123-126

Detection and characterization of stacking faults by light beam induced current mapping and scanning infrared microscopy [4]in silicon

C. Vève-Fossati - S. Martinuzzi

Laboratoire LP DSO, EA 2192, Faculté des sciences et techniques de Marseille-St. Jérôme, 13397 Marseille Cedex 20, France

Received: 13 November 1997 / Revised: 6 March 1998 / Accepted: 30 April 1998

Abstract
Non destructive techniques like scanning infrared microscopy and light beam induced current mapping are used to reveal the presence of stacking faults in heat treated Czochralski grown silicon wafers. In oxidized or contaminated samples, scanning infrared microscopy reveals that stacking faults grow around oxygen precipitates. This could be due to an aggregation of silicon self-interstitials emitted by the growing precipitates in the (111) plane. Light beam induced current maps show that the dislocations which surround the stacking faults are the main source of recombination centers, especially when they are decorated by a fast diffuser like copper.

Résumé
Des techniques non destructives telles que la microscopie infrarouge à balayage et la cartographie de photocourant induit par un spot lumineux ont été utilisées pour révéler la présence de fautes d'empilement après traitements thermiques, dans des plaquettes de silicium préparées par tirage Czochralski. Dans des échantillons oxydés ou contaminés, la microscopie infrarouge à balayage révèle des fautes d'empilement qui se développent autour des précipités d'oxygène. Cela peut être dû à la formation d'un agglomérat d'auto-interstitiels de silicium émis par la croissance des précipités dans les plans (111). Les cartographies de photocourant montrent que les dislocations qui entourent les fautes d'empilement sont la principale source de centres de recombinaison, et cela tout particulièrement quand ces fautes sont décorées par un diffuseur rapide tel que le cuivre.

PACS
61.72.Yx Interaction between different crystal defects; gettering effect

Author for correspondance: santo.martinuzzi@DSO.U-3mrs.fr

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