The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects

Issue		Eur. Phys. J. Appl. Phys. Volume 3, Number 1, July 1998


Page(s)		49 - 52
DOI		10.1051/epjap:1998203

DOI: 10.1051/epjap:1998203

Eur. Phys. J. AP 3, 49-52

The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects

L. Kaabi^1,2 - J. Ben Brahim¹ - B. Remaki², C. Gontrand² - H. El Omari² - J.-C. Bureau³ - Z. Sassi³ - B. Balland²

¹ Institut National des Sciences Appliquées et de Technologie, Département de Génie Physique et Instrumentation,
Centre Urbain Nord, BP 676, 1080 Tunis Cedex, Tunisia
² Laboratoire de Physique de la Matière C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
³ Laboratoire de Thermodynamique Appliquée, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France

Received: 4 February 1997 / Revised: 9 February 1998 / Accepted: 2 March 1998

Abstract
The present study deals with the investigation of electrically active damage induced by direct and through protecting oxide layer implantation of ¹¹B⁺ ions. The residual defects have been determined by means of Deep Level Transient Spectroscopy (DLTS). It has been found that the number of defects is practically reduced to one centre when the implantation is performed through an oxide layer. The defect spectrum evolution, under the effect of the implant mass and the RTA treatments, has been also investigated. The defect generation kinetics, under annealing treatments, is found strongly depending on ¹¹B⁺ ionic number reaching the substrate.

PACS
73.40.Sx Metal-semiconductor-metal structures - 73.20.Hb Impurity and defect levels; energy states of adsorbed species - 73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions and heterojunctions

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