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Issue Eur. Phys. J. Appl. Phys.
Volume 19, Number 1, July 2002
Page(s) 15 - 24
Section Physics of Energy Conversion\ and Coupled Phenomena
DOI 10.1051/epjap:2002044
Published online 28 June 2002



Eur. Phys. J. AP 19, 15-24 (2002)
DOI: 10.1051/epjap:2002044

Thermionic emission and photoemission of electrons from dielectric and metal surfaces in Cs vapor cells

A.V. Papoyan, J. Guéna, M. Lintz and M.A. Bouchiat

Laboratoire Kastler Brossel (Laboratoire de l'École Normale Supérieure et de l'Université Pierre et Marie Curie, associé au CNRS (UMR 8552).) , Département de Physique de l'École Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France

marianne@lkb.ens.fr

(Received: 19 December 2001 / Accepted: 4 April 2002 Published online: 28 June 2002)

Abstract
We have studied the electrical conductivity of Cs vapor cells in the temperature range  °C with Cs atom density up to $3\times 10^{14}$ cm -3. Depending on these parameters controlled independently, two predominant mechanisms are shown to determine the electrical properties of the cells: wall surface conductivity and space conductivity. The latter is caused by thermionic emission of electrons from the "cesiated" surface at submonolayer coverage. This process has been studied for the case of metal (Ti) and dielectric (Al 2O 3) surfaces. The values of the electron emission work function are found to be 1.38-1.42 V for Ti, 1.4-1.45 V for alumina and 1.39 V for sapphire. From independent photoemission studies, we also obtain the value of 1.35-1.40 V for the work function of sapphire. Our measurement technique not requiring internal electrodes can easily be implemented for studies of charge emission and ionization, in different types of dielectric cells containing a low density gas medium.

PACS
79.40.+z - Thermionic emission.
79.60.-i - Photoemission and photoelectron spectra.
73.25.+i - Surface conductivity and carrier phenomena.


© EDP Sciences 2002


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