Issue Eur. Phys. J. Appl. Phys. Volume 46, Number 2, May 2009 Article Number 20402 Number of page(s) 5 Section Physics of Organic Materials and Devices DOI 10.1051/epjap/2009035 Published online 01 April 2009

Eur. Phys. J. Appl. Phys. 46, 20402 (2009)
DOI: 10.1051/epjap/2009035

The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C₂H₅COOH)/p-Si/Al structure

A.F. Özdemir¹, Z. Kotan¹, D.A. Aldemir¹ and S. Altındal<sup>2

1</sup>  Süleyman Demirel University, Faculty of Sciences and Arts, Department of Physics, 32260 Isparta, Turkey
²  Gazi University, Faculty of Engineering and Architecture, Department of Chemical Engineering, 06500 Ankara, Turkey

ozdemir@fef.sdu.edu.tr

Received: 20 August 2008 / Received in final form: 7 January 2009 / Accepted: 16 January 2009 / Published online: 1st April 2009

Abstract
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-organic compound conductive polymer-semiconductor Al/P2ClAn(C₂H₅COOH)/p-Si structures were measured in the temperature range 80–340 K. P2ClAn: the poly(2-chloroaniline). The P2ClAn emeraldine salt was synthesized chemically by using propionic (C₂H₅COOH) acid. The analysis of I-V characteristics based on the thermoionic emission (TE) mechanism has revealed a decrease of zero-bias barrier height and a increase of the ideality factor at lower temperatures. Temperature dependence of the barrier height (BH) has shown a disagreement with those calculated from C-V characteristics. This behaviour is attributed to Schottky barrier inhomogeneities at interface. The temperature coefficient of BH has been found to be -2.910^-4 eV/K for Al/P2ClAn(C₂H₅COOH)/p-Si. ln(I₀/T²) versus 1/T plot gives activation energy and Richardson constant as 0.12 eV and 3.8210^-9 A/K² cm², respectively.

PACS
73.40.-c - Electronic transport in interface structures.
73.40.Ei - Rectification.
73.40.Sx - Metal-semiconductor-metal structures.
73.61.Ph - Polymers; organic compounds.

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