Issue Eur. Phys. J. Appl. Phys. Volume 46, Number 1, April 2009 International Symposium on Flexible Organic Electronics (IS-FOE) Article Number 12509 Number of page(s) 4 Section Topical Issue International Symposium on Flexible Organic Electronics (IS-FOE) DOI 10.1051/epjap/2009024 Published online 05 March 2009

Eur. Phys. J. Appl. Phys. 46, 12509 (2009)
DOI: 10.1051/epjap/2009024

How can the nanostructure affect the charge transport in PLED?

M.M.D. Ramos and H.M.C. Barbosa

Department of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal

marta@fisica.uminho.pt

Received: 20 October 2008 / Received in final form: 7 January 2009 / Accepted: 9 January 2009 / Published online: 5 March 2009

Abstract
In polymer light emitting diodes (PLEDs) each semiconducting polymer chain consists of a large number of conjugated segments linked by kinks or twists and each one of them behaves like a separated straight strand. The length and orientation of the conjugated strands relative to the electrodes surface depend on the deposition conditions used. Atomistic results have shown that the molecular properties of the conjugated strands depend on their length, which can affect the electronic processes involved in PLEDs. The aim of this work is to study the influence of the average conjugation length within the polymer layer on charge injection, trapping and recombination in PLEDs for all polymer strand orientations relative to the electrodes surface obtained experimentally by different techniques. For that purpose we use a mesoscopic model that considers the morphology and the molecular properties of the polymer. Our results show that by increasing the average conjugation length of the active polymer layer the amount of charge injected into the device increases and the recombination probability occurs preferentially in segments longer than the average conjugation length, both effects having implications on the performance of polymer LEDs.

PACS
73.23.-b - Electronic transport in mesoscopic systems.
72.20.Jv - Charge carriers: generation, recombination, lifetime, and trapping.
73.40.Sx - Metal-semiconductor-metal structures.

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