Issue Eur. Phys. J. Appl. Phys. Volume 46, Number 1, April 2009 International Symposium on Flexible Organic Electronics (IS-FOE) Article Number 12504 Number of page(s) 5 Section Topical Issue International Symposium on Flexible Organic Electronics (IS-FOE) DOI 10.1051/epjap/2009017 Published online 10 March 2009

Eur. Phys. J. Appl. Phys. 46, 12504 (2009)
DOI: 10.1051/epjap/2009017

Doping of poly(3-hexylthiophene) nanofibers: microscopic morphology and electrical properties

S. Desbief¹, G. Derue¹, Ph. Leclère¹, S. Lenfant², D. Vuillaume² and R. Lazzaroni<sup>1

1</sup>  Laboratory for Chemistry for Novel Materials, University of Mons Hainaut/Materia Nova, 20 Place du Parc, 7000 Mons, Belgium
²  Molecular Nanostructures and Devices group, Institute for Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, Avenue Poincaré, BP 60069, 59652 Cedex, Villeneuve d'Ascq, France

sdesbief@averell.umh.ac.be

Received: 20 October 2008 / Accepted: 18 December 2008 / Published online: 10 March 2009

Abstract
The microstructure of thin deposits of poly(3-hexylthiophene) on silicon surfaces is investigated as a function of the solution concentration, the maturation time and the solvent nature, with the aim of generating one monolayer of P3HT nanofibers on the surface. These films are then exposed to a NOPF₆ solution, in order to oxidize the conjugated system and to produce conducting nanostructures. The effect of the chemical doping on the microscopic morphology and the electrical properties is analyzed on the basis of AFM and I-V measurements.

PACS
82.35.Cd - Conducting polymers.
87.64.Dz - Scanning tunneling and atomic force microscopy.
81.07.Nb - Molecular nanostructures.

© EDP Sciences 2009

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