Issue Eur. Phys. J. Appl. Phys. Volume 44, Number 2, November 2008 Page(s) 117 - 123 Section Semiconductors and Devices DOI 10.1051/epjap:2008165 Published online 21 October 2008

Eur. Phys. J. Appl. Phys. 44, 117-123 (2008)
DOI: 10.1051/epjap:2008165

Phase transformation in Pb:GeSbTe chalcogenide films

J. Kumar¹, P. Kumar¹, M. Ahmad¹, R. Chander¹, R. Thangaraj¹ and T.S. Sathiaraj<sup>2

1</sup>  Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
²  Department of Physics, University of Botswana, Botswana

rthangaraj@rediffmail.com

Received: 6 May 2008 / Accepted: 21 August 2008 / Published online: 21 October 2008

Abstract
A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.

PACS
68.55.-a - Thin film structure and morphology.
78.20.-e - Optical properties of bulk materials and thin films.
78.66.Jg - Amorphous semiconductors; glasses.

© EDP Sciences 2008

What is OpenURL?