Issue Eur. Phys. J. Appl. Phys. Volume 38, Number 3, June 2007 Page(s) 197 - 201 Section Semiconductors and Related Materials DOI 10.1051/epjap:2007028 Published online 31 January 2007

Eur. Phys. J. Appl. Phys. 38, 197-201 (2007)
DOI: 10.1051/epjap:2007028

Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

R.A. Ismail¹, O.A. Abdulrazaq², A.A. Hadi³ and O.A. Hamadi<sup>4

1</sup>  Solar Cells and Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq
²  NASSR State Company, Ministry of Industry and Minerals, Baghdad, Iraq
³  School of Applied Sciences, University of Technology, Baghdad, Iraq
⁴  PO Box 55159, Baghdad 12001, Iraq

odayata2001@yahoo.com

(Received: 12 September 2006 / Accepted: 28 September 2006 / Published online: 31 January 2007)

Abstract
In this paper, we report the experimental data of photoresponse namely; voltage responsivity and speed of response at = 904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum Responsivity obtained for p-n junctions photodetectors prepared by laser fluence of 9.17 J/cm² for Al-doped Si and 10.03 J/cm² for Sb-doped Si at substrate temperature (T_s) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 1.6 for and 2.7 for for Al-doped Si and Sb-doped Si photodetectors respectively when T_s is raised from 300 K to 598 K.

PACS
61.72.-y - Defects and impurities in crystals; microstructure.
73.40.Lq - Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.
42.62.-b - Laser applications.

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