Issue Eur. Phys. J. Appl. Phys. Volume 37, Number 1, January 2007 Page(s) 53 - 55 Section Nanomaterials and Nanotechnologies DOI 10.1051/epjap:2006126 Published online 08 November 2006

Eur. Phys. J. Appl. Phys. 37, 53-55 (2007)
DOI: 10.1051/epjap:2006126

Synthesis of one-dimensional GaN nanorods on Si(111) substrates by magnetron sputtering

Shoubin Xue, Huizhao Zhuang, Chengshan Xue and Lijun Hu

Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China

zhuanghuizhao@sdnu.edu.cn

(Received: 23 July 2006 / Received in final form: 31 July 2006 / Accepted: 1 September 2006 / Published online: 8 November 2006 )

Abstract
GaN nanorods have been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga₂O₃/ZnO films at 950 C in a quartz tube. The GaN nanorods have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared (FTIR) system and fluorescence spectrophotometer. The results show that the nanorods are pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters ranging from 100 nm to 750 nm, and the growth direction of GaN nanorods is perpendicular to (101) plane. The photoluminescence (PL) spectrum indicates that the good emission property for the nanorods. Finally, the growth mechanism is also briefly discussed.

PACS
68.65.-k - Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties.
78.30.Fs - III-V and II-VI semiconductors.
81.15.Cd - Deposition by sputtering.

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