Issue Eur. Phys. J. Appl. Phys. Volume 37, Number 1, January 2007 Page(s) 39 - 47 Section Surfaces, Interfaces and Films DOI 10.1051/epjap:2006151 Published online 13 December 2006

Eur. Phys. J. Appl. Phys. 37, 39-47 (2007)
DOI: 10.1051/epjap:2006151

Microstructure and morphology evolution in chemically deposited semiconductor films: 4. From isolated nanoparticles to monocrystalline PbS thin films on GaAs(100) substrates

A. Osherov, V. Ezersky and Y. Golan

Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

ygolan@bgu.ac.il

(Received: 2 July 2006 / Received in final form: 9 October 2006 / Accepted: 12 October 2006 / Published online: 13 December 2006)

Abstract
Thin lead sulfide films were grown on single crystal GaAs(100) substrates by chemical deposition using Pb(NO₃)₂ and CS(NH₂)₂ with excess of NaOH in aqueous solution at a range of deposition temperatures 0-50 °C. The microstructure and morphology evolution were studied as a function of the deposition conditions, resulting in a wide range of microstructures. Ultrahigh resolution scanning electron microscopy and atomic force microscopy indicated a systematic change in particle shape and surface morphology as a function of deposition temperature and deposition time. X-ray diffraction of 200-500 nm thick films indicated a dominant texture throughout the deposition temperature range. At deposition temperatures above 40 °C, single crystal films were obtained. Cross-sectional transmission electron microscopy analyses showed a unique (011) (100) and [100] [011] orientation relationship.

PACS
68.55.Jk - Structure and morphology; thickness; crystalline orientation and texture.
81.15.Lm - Liquid phase epitaxy; deposition from liquid phases.
81.07.Bc - Nanocrystalline materials.

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