Issue Eur. Phys. J. Appl. Phys. Volume 32, Number 3, December 2005 Page(s) 155 - 158 Section Microelectronics and Optoelectronics DOI 10.1051/epjap:2005089 Published online 14 December 2005

Eur. Phys. J. Appl. Phys. 32, 155-158 (2005)
DOI: 10.1051/epjap:2005089

All the physical and electrical parameters of the MOS transistor on a single graph (Q

G. Vincent

Département de Physique, Université Joseph Fourier, Grenoble, France Laboratoire de Technologie de la Microélectronique, 17 avenue des Martyrs, 38054 Grenoble 9, France

gilbert.belledonne@wanadoo.fr

(Received: 24 May 2005 / Accepted: 25 October 2005 / Published online: 14 December 2005 )

Abstract
A single and simple graph is proposed, to visualize the impact of all the numerous parameters playing a role in the metal-oxide-semiconductor (MOS) transistor characteristics: doping and permittivity of the semiconductor, thickness, permittivity and charge of the oxide, temperature, and finally gate, drain and substrate voltages. In addition, MOS structure and capacitance properties are presented.

PACS
85.30.Tv - Field effect devices.
85.40.-e - Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology.
85.30.De - Semiconductor-device characterization, design, and modeling.
73.40.Qv - Metal-insulator-semiconductor structures (including semiconductor-to-insulator).

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