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Issue Eur. Phys. J. AP
Volume 22, Number 1, April 2003
Page(s) 3 - 10
Section Structural and Functional Materials
DOI 10.1051/epjap:2003018
Published online 03 April 2003

Eur. Phys. J. AP 22, 3-10 (2003)
DOI: 10.1051/epjap:2003018

Interfacial reactions in relation with adhesion failures in $\mathsf{Al/TiN/Ti/SiO_2}$ and Al/TiN/Ti/borophosphosilicate glass systems

C. Alfonso1, L. Fares1, Y. Huiban2, D. Gallet2, M. Ismeurt2 and A. Charaï1

1  TECSEN, UMR CNRS 6122, Université d'Aix-Marseille III, Faculté des Sciences et Techniques de Saint Jérôme, Case 511, 13397 Marseille Cedex 20, France
2  ATMEL, Zone Industrielle de Rousset, 13106 Rousset, France

ahmed.charai@univ.u-3mrs.fr

(Received: 5 December 2001 / Received in final form: 10 December 2002 / Accepted: 13 December 2002 Published online: 3 April 2003 )

Abstract
The objective of this work is to determine the origin of a decohesion problem that occurs during the fabrication process of certain integrated circuits. This decohesion takes place at the Ti/dielectric interface with the dielectric being either SiO 2 or borophosphosilicate glass (BPSG). The frequency of the decohesion increased when the dielectric is BPSG. In order to understand the reason for the difference in decohesion rates for the two dielectrics, a comparative study was performed before and after annealing. X-ray Diffraction was used to determine the microstructure of the different layers and Transmission Electron Microscopy coupled to Electron Energy Loss Spectroscopy and X-ray Energy Dispersive Spectroscopy was mainly used to characterize the interfaces and nanophases that had formed during annealing. A fundamental difference observed was the Ti/dielectric interface reactivity: in the case of BPSG, an amorphous layer rich in P is formed before the Ti 5Si 3 silicide. Two hypothesis are put forward in order to explain adhesion failures: a decrease in the rate of Ti 5Si 3 formation kinetics and/or a decrease of the glass transition temperature induced by P enrichment.

PACS
68.37.Lp - Transmission electron microscopy (TEM) (including STEM, HRTEM, etc.).
68.55.Nq - Composition and phase identification.
68.35.Fx - Diffusion; interface formation.

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