Issue Eur. Phys. J. AP Volume 18, Number 1, April 2002 Page(s) 25 - 31 Section Characterization of Materials DOI 10.1051/epjap:2002023

Eur. Phys. J. AP 18, 25-31 (2002)
DOI: 10.1051/epjap:2002023

Thermally stimulated current measurements on polycrystalline PbI layers

J.P. Ponpon and M. Amann

Laboratoire PHASE (CNRS UPR 292) , BP 20, 67037 Strasbourg-Cedex 2, France

ponpon@phase.c-strasbourg.fr

(Received: 24 September 2001 / Received in final form: 28 November 2001 / Accepted: 12 December 2001)

Abstract
Thermally stimulated current measurements have been performed on polycrystalline layers of lead iodide grown from solution. Several TSC peaks or bands have been observed at temperatures of 100 K, 195-220 K, 230-240 K and 270-300 K. Comparison with PbI ₂ single crystal shows that the polycrystalline structure of the material introduces additional defects. In contrast the defect currently found in single crystal and attributed to the lead vacancy has not been clearly evidenced in the polycrystalline layers. The position and relative intensity of the peaks can be modified by Ag doping and thermal annealing. On the other hand, only small differences resulting from the anisotropy of the material have been observed depending on the orientation of the electric field with regards to the grains orientation.

PACS
71.55.Ht - Other nonmetals.
72.20.Jv - Charge carriers: generation, recombination, lifetime, and trapping .
81.05.Hd - Other semiconductors.


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