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Eur. Phys. J. AP 18, 9-15 (2002)
DOI: 10.1051/epjap:2002021
Unusual high sensitivity in highly oriented laser ablated thin films of
on
(1102) sapphire and (100)
K.I. Gnanasekar1, B. Rambabu1 and K.C. Langry2
1 Surface Science, Spectroscopy and Solid State Ionics Laboratory, Department of Physics, Southern University and A&M College, Baton Rouge, Louisiana 70813, USA
2 Chemical and Biological Detection Group, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
Rambabu@grant.phys.subr.edu
(Received: 28 April 2001 / Received in final form: 15 November 2001 / Accepted: 17 December 2001)
Abstract
A systematic investigation on growth and sensor characteristics of SnO
2 thin films
of different orientations is reported for the first time. Thin films were grown by pulsed
laser (KrF;
nm) ablation technique under in-situ conditions. Films deposited at
525 °C on (1102) sapphire were predominantly (101) orientated whereas those deposited
on (100) LaAlO
3 were highly
a-axis orientated. Sensors made of predominantly (101)
oriented films exhibited more than two orders magnitude change in resistance even for
100 ppm of H
2 in air at 310 °C. The response and retracing times of the sensor were
remarkably short respectively 30 and 200 s. Sensors made of
a-axis oriented films also
exhibited similar sensitivity and response time for the same quantity of both H
2 and LPG.
However, the retrace time was very long typically about 20 min. Atomic force
microscopic (AFM) investigation reveals that the films are highly granular with an
average size of about 100-150 nm which is ten times larger than the critical size of 6
nm, a criterion required for high sensitivity. (The Debye length of
nm at 293 K and the critical grain size is therefore
Debye length, which
is 6 nm.)
07.07.Df - Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing.
81.15.Fg - Laser deposition.
73.61.Jc - Amorphous semiconductors; glasses.
© EDP Sciences 2002
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