Issue Eur. Phys. J. AP Volume 15, Number 2, August 2001 Page(s) 117 - 121 Section Nano and Micro Electronics,\ Microsystems and Devices DOI 10.1051/epjap:2001103

DOI: 10.1051/epjap:2001103

Eur. Phys. J. AP 15, 117-121 (2001)

Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method

A. Poncet, C. Faugeras and M. Mouis

Laboratoire de Physique de la Matière (UMR-CNRS 5511) , INSA-Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne, France

poncet@lpm.insa-lyon.fr

(Received: 20 November 2000 / Revised: 18 April 2001 / Accepted: 27 April 2001 )

Abstract
This paper presents a flexible numerical technique which is especially suited to analyze lateral modulation of quantum effects in short channel MOS transistors. We discuss boundary conditions for the Schr dinger equation and the impact of the finite element meshing. We show how channel length shortening alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum approach.

PACS
85.30.De - Semiconductor-device characterization, design, and modeling.
02.70.Dh - Finite-element and Galerkin methods.


© EDP Sciences 2001

What is OpenURL?