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Issue		Eur. Phys. J. AP Volume 11, Number 1, July 2000
Page(s)		3 - 8
DOI		10.1051/epjap:2000139

DOI: 10.1051/epjap:2000139

Eur. Phys. J. AP 11, 3-8

The growth of boron doped (100) textured diamond films
by three-step process

Chau-Shu Chen - Chi-Ling Chen - Juh-Tzeng Lue

Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
jtlue@phys.nthu.edu.tw

Received: 22 September 1998 / Revised: 21 April 1999 / Accepted: 6 March 2000

Abstract
p-type (100) faceted diamond films can be successfully grown by bubbling H₂ through liquid B(OCH₃)₃ during the Microwave Plasma Enhanced Chemical Vapour Deposition (MPCVD). Ramann spectra and scanning electron micrographs (SEM) convincingly illustrate that diamond-film growth on silicon substrates by a three-step process yields good uniformity with preferential orientation. The field emission current density of the boron doped diamond films can be enhanced from $0.7\,\mu$A/cm² for the as grown films to $140\,\mu$A/cm² at an applied field of 20 V/$\mu$m by hydrogenation treatment.

PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) -
81.40.Tv Optical and dielectric properties (related to treatment conditions) - 68.55.Jk Structure
and morphology; thickness

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