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DOI: 10.1051/epjap:1999106
Eur. Phys. J. AP 5, 1-2
Rapid note
A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet
M.A. Grado-Caffaro - M. Grado-Caffaro
C/Julio Palacios, 11, 9B, 28029 Madrid, Spain
Received: 25 June 1998 / Revised and Accepted: 22 October 1998
Abstract
A sensitivity factor for electron mobility with respect to the tunnel oxide thickness
in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a
field-dependent mobility is assumed.
PACS
85.30.-z Semiconductor devices -
85.30.De Semiconductor-device characterization, design, and modeling -
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling
devices)
Copyright EDP Sciences
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