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Issue		Eur. Phys. J. AP Volume 5, Number 1, January 1999
Page(s)		91 - 94
DOI		10.1051/epjap:1999114

DOI: 10.1051/epjap:1999114

Eur. Phys. J. AP 5, 91-94

Annealing of radiation damage in MOS devices: Study
by diode parameter determination

E. Bendada¹ - K. Raïs²

¹ Département de Génie Électrique, Université My Ismaïl-F.S.T, BP 509, Errachidia, Marocco
² Laboratoire de Caractérisation des Composants à Semiconducteurs, Université Chouaïb Doukkali, BP 20, El Jadida, Marocco

Received: 21 November 1998 / Revised: 24 April 1998 / Accepted: 1st September 1998

Abstract
Previous modeling techniques of P-N junctions have been applied for studying the annealing of Gamma-ray damage in power MOSFETs. The degradation of the physical parameters of the body-drain junction for a dose rate of 103.8 rad/min is presented. Large decrease of the reverse recombination current, of the series resistance and of the ideality factor are shown to be related to the thermal anneal. These effects are discussed and explained by the evolution of the radiation-induced defects.

PACS
73.40.Qv Metal insulator semiconductor structures (including semiconductor-to-insulator) - 61.80.Ed $\gamma$-ray effects - 73.20.-r Surface and interface electron states

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