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Issue		Eur. Phys. J. AP Volume 3, Number 2, August 1998
Page(s)		135 - 139
DOI		10.1051/epjap:1998215

DOI: 10.1051/epjap:1998215

Eur. Phys. J. AP 3, 135-139

De la nécessité d'une fine couche de nickel pour obtenir
[4] des couches minces de MoSe₂ photoconductrices

J. Ouerfelli¹ - Z. Jlaïel¹ - N. Guettari² - E. Gourmelon¹ - J. Pouzet¹ - J.C. Bernede¹ - A. Khelil² - M. Zoater³ - A. Conan¹

¹ Équipe de Physique des Solides pour l'Électronique, Groupe Couches Minces et Matériaux Nouveaux, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 03, France
² LPMCE, Institut de Physique, Université d'Oran Es-Senia, BP 1642, Oran, Algérie
³ Université Libanaise, Faculté des Sciences I, Beyrouth, Liban

Reçu : 15 décembre 1997 / Revisé : 7 avril 1998 / Accepté : 21 avril 1998

Abstract
A process to obtain photoconductive $\mathrm{MoSe_2}$ thin films is described. The films are obtained by annealing a multilayer Mo/Se/Mo...Se/Mo/Se structure evaporated onto a thin Ni layer. The films are stoichiometric and textured with the c axis of the crystallites perpendicular to the plane of the substrate. The films are photoconductive with a photocurrent of about $80~\mathrm{\mu A}$.

Résumé
Une méthode d'obtention de couches minces photoconductrices de $\mathrm{MoSe_2}$ a été mise au point. Ces couches sont obtenues à partir d'une structure multicouches Mo/Se/Mo/Se...Mo/Se déposée sur une fine couche de Ni. À l'issue d'un traitement thermique on a montré que des couches minces stchiométriques, texturées et photoconductrices sont obtenues.

PACS
73. Electronic structure and electrical properties of surfaces, interfaces and thin films

Author for correspondance: jean.pouzet@physique.univ.nantes.fr

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