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Issue Eur. Phys. J. AP
Volume 3, Number 2, August 1998
Page(s) 149 - 158
DOI 10.1051/epjap:1998217

DOI: 10.1051/epjap:1998217

Eur. Phys. J. AP 3, 149-158

Structural modifications induced by electronic energy loss
[4] in Ni3B irradiated with GeV heavy ions[*]

A. Audouard1 - A. Dunlop2 - D. Lesueur2[*] - N. Lorenzelli2 - L. Thomé3

1 Laboratoire de Physique de la Matière Condensée[*], Service National des Champs Magnétiques Pulsés, INSA, Complexe Scientifique de Rangueil, 31077 Toulouse, France
2 Laboratoire des Solides Irradiés, Commissariat à l'Énergie Atomique, École Polytechnique, 91128 Palaiseau Cedex, France
3 Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse[*], Bâtiment 108, 91405 Orsay campus, France

Received: 26 November 1997 / Revised: 10 April 1998 / Accepted: 15 April 1998

Abstract
Crystalline $\mathrm{Ni_3B}$ samples have been irradiated with GeV heavy ions (from $^\mathrm{O}$ to $^\mathrm{U}$) at low temperature in order to study the damage induced in this compound by ion electronic energy loss. Electrical resistance measurements were performed in situ during irradiation and during annealing. Subsequent X-ray diffraction data and transmission electron microscopy observations reveal a change of the radiation damage process as a function of the electronic stopping power (dE/dx)e. At low (dE/dx)e isolated defects are created, while at high (dE/dx)e irradiation generates continuous amorphous tracks. Amorphous inclusions (discontinuous tracks) are most likely formed in the intermediate (dE/dx)e range. The amorphous phase induced by swift heavy ion irradiation, different from that formed by quenching techniques, is unstable at room temperature over a period of a few months.

PACS
61.43.Dq Amorphous semiconductors, metals, and alloys - 61.80.Jh Ion radiation effects

Author for correspondance: annie.dunlop@polytechnique.fr



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