Issue Eur. Phys. J. Appl. Phys. Volume 47, Number 3, September 2009 Article Number 30303 Number of page(s) 10 Section Semiconductors and Devices DOI 10.1051/epjap/2009111 Published online 12 June 2009

Eur. Phys. J. Appl. Phys. 47, 30303 (2009)
DOI: 10.1051/epjap/2009111

Etch pits on (hk0) and (hh) silicon surfaces. Experimental shapes and simulations

C.R. Tellier

FEMTO-ST Institute, Frequency and Time Department, 26 chemin de l'épitaphe, 25030 Besançon Cedex, France

ctellier@ens2m.fr

Received: 6 February 2009 / Accepted: 20 April 2009 / Published online: 12 June 2009

Abstract
The present work is concerned with the development of etch pits on (hk0) and (hh) silicon surfaces immersed in various etchants. Final shapes of small etch pits are found to be bounded by  facets solely. The orientation dependence of etching shapes is explained in terms of a kinematic and tensorial model involved in the simulator TENSOSIM. An agreement between experimental and theoretical etching shapes is observed showing that the simulator can generate quite accurate 3D etching shapes for pits blocked by limiting facets. After a fair adjustment of the database the simulator derives also etching shapes close to experimental shapes of large pits.

PACS
07.05.Tp - Computer interfaces.
81.05.Cy - Elemental semiconductors.
81.65.Cf - Surface cleaning, etching, patterning.

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