Issue Eur. Phys. J. Appl. Phys. Volume 46, Number 2, May 2009 Article Number 20501 Number of page(s) 5 Section Surfaces, Interfaces and Films DOI 10.1051/epjap/2009053 Published online 01 April 2009

Eur. Phys. J. Appl. Phys. 46, 20501 (2009)
DOI: 10.1051/epjap/2009053

Pulsed laser deposition of bismuth telluride thin film and annealing effects

L.S. Faraji, R.P. Singh and M. Allahkarami

School of Mechanical and Aerospace Engineering, Helmerich Advanced Technology Research Center, Oklahoma State University, 700N Greenwood Ave, Tulsa, OK 74106, USA

leila.seyedfaraji@okstate.edu

Received: 3 December 2008 / Received in final form: 14 February 2009 / Accepted: 19 February 2009 / Published online: 1st April 2009

Abstract
Pulsed laser deposition method was used to prepare Bi₂Te₃ thermoelectric thin films on a soda lime glass substrate at room temperature. Surface morphology of Bi₂Te₃ thin films was studied by AFM (atomic force microscopy) images. The influence of thermal annealing in vacuum condition on microstructure and surface morphology of films was investigated in wide range of temperature. The results demonstrate that annealing induces a transition from amorphous to polycrystalline structures and increases electrical conductivity. X-ray diffraction analysis proves that the film annealed at 300 °C for 120 min appears in large grain size polycrystalline structure but film annealed at 400 °C in the same condition has a preformed crystal growth texture in (006) direction.

PACS
61.05.-a - Techniques for structure determination.
85.30.De - Semiconductor-device characterization, design, and modeling.
61.05.cp - X-ray diffraction.
68.37.Ps - Atomic force microscopy (AFM).

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