Issue Eur. Phys. J. Appl. Phys. Volume 46, Number 2, May 2009 Article Number 20303 Number of page(s) 4 Section Semiconductors and Devices DOI 10.1051/epjap/2009047 Published online 27 March 2009

Eur. Phys. J. Appl. Phys. 46, 20303 (2009)
DOI: 10.1051/epjap/2009047

Electrical properties of Se–Zn–In chalcogenide glasses

A.K. Singh, N. Mehta and K. Singh

Department of physics, Banaras Hindu University, 221005 Varanasi, India

kedar_abhay@rediffmail.com

Received: 5 September 2008 / Received in final form: 20 January 2009 / Accepted: 9 February 2009 / Published online: 27 March 2009

Abstract
Electrical measurements of Se_98-XZn₂In_X (X = 0, 2, 4, 6 and 10) chalcogenide glasses have been carried out at room temperature. I-V characteristic of the present glasses were recorded upto 200 V. A drastic changes in I-V characteristic have been observed between 180 to 200 V for 4, 6, 10 at% of indium. The composition dependence of electrical conductivity is also discussed.

PACS
63.50.Lm - Glasses and amorphous solids.
72.15.Cz - Electrical and thermal conduction in amorphous and liquid metals and alloys.
61.43.Dq - Amorphous semiconductors, metals, and alloys.

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