Issue Eur. Phys. J. Appl. Phys. Volume 46, Number 2, May 2009 Article Number 20401 Number of page(s) 6 Section Physics of Organic Materials and Devices DOI 10.1051/epjap/2009034 Published online 08 April 2009

Eur. Phys. J. Appl. Phys. 46, 20401 (2009)
DOI: 10.1051/epjap/2009034

Electrical characterizations of SnPc/p-GaAs heterojunction

M.M. El-Nahass¹ and A.S. Faidah<sup>2

1</sup>  Physics department, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt
²  Physics Department, Faculty of Science, King Abdul Aziz University, Jeddah, Saudi Arabia

prof_nahhas@yahoo.com

Received: 2 August 2008 / Received in final form: 31 December 2008 / Accepted: 15 January 2009 / Published online: 8 April 2009

Abstract
Current voltage and capacitance-voltage characteristics for SnPc thin film with ~105 nm thickness; deposited on p-GaAs single crystals have been investigated. The dark current voltage-characteristics of the prepared junction have been investigated in a temperature range from ~303 to 393 K. The obtained results showed rectification behaviour. At low forward and reverse bias, the current was found to be limited by the thermoionic emission, while at high forward voltage, space charge limited current dominated by a single trap level of 0.22 eV. The analysis of the dark capacitance voltage characteristics indicated that the carrier concentration is 1.410¹⁴ cm^-3 with a built in voltage ~0.55 eV.

PACS
81.15.Fg - Laser deposition.
73.40.-c - Electronic transport in interface structures.
73.50.Pz - Photoconduction and photovoltaic effects.

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