EDP Sciences Journals List
Home Document
Subscriber Authentication Point
Issue Eur. Phys. J. Appl. Phys.
Volume 47, Number 2, August 2009
11th International Symposium on High Pressure, Low Temperature Plasma Chemistry (HAKONE XI)
Article Number 22820
Number of page(s) 6
Section 11th International Symposium on High Pressure, Low Temperature Plasma Chemistry (HAKONE XI)
DOI 10.1051/epjap/2009079
Published online 28 April 2009

Eur. Phys. J. Appl. Phys. 47, 22820 (2009)
DOI: 10.1051/epjap/2009079

Deposition of functional hydrogenated amorphous carbon-nitride film (a-CN:H) using C2H4/N2 townsend dielectric barrier discharge

C. Sarra-Bournet1, 2, 3, 4, N. Gherardi1, 2, S. Turgeon3, G. Laroche3, 4 and F. Massines5

1  Université de Toulouse, UPS, INPT, LAPLACE – Laboratoire Plasma et Conversion d'Énergie, 118 route de Narbonne, 31062 Toulouse Cedex 9, France
2  CNRS, LAPLACE, 31062 Toulouse, France
3  University Hospital Research Center CHUQ, St-Francois d'Assise Hospital, 10 rue de l'Espinay, G1L3L5, Quebec, Canada
4  Surface Engineering Laboratory, CERMA, Department of Mining, Metallurgical and Materials Engineering, Université Laval, G1V 0A6, Quebec, Canada
5  CNRS, PROMES, Tecnosud, 66100 Perpignan, France

christian.sarra-bournet.1@ulaval.ca

Received: 6 January 2009 / Accepted: 2 March 2009 / Published online: 28 April 2009

Abstract
The present work is an investigation of the chemical composition and growth profile of an hydrogenated amorphous carbon nitride film (a-CN:H) deposited by atmospheric pressure Townsend discharge in C2H4/N2. Various surface characterization techniques were used to evaluate the coatings properties (X-ray Photoelectron Spectroscopy, Fourier Transform Infrared Spectroscopy, Profilometry, Scanning Electron Microscopy). The coating obtained presented a high N/C ratio and a high concentration of N-functionalities. The results revealed two different growth mechanisms depending on the residence time of the precursor molecules; at first, the growth is mainly due to radicals then a powder formation mechanism appears, therefore leading to different chemical composition and surface properties.

PACS
52.80.Dy - Low-field and Townsend discharges .
52.77.Dq - Plasma-based ion implantation and deposition.
68.37.-d - Microscopy of surfaces, interfaces, and thin films.
68.55.-a - Thin film structure and morphology.

© EDP Sciences 2009


What is OpenURL?

The OpenURL standard is a protocol for transmission of metadata describing the resource that you wish to access. An OpenURL link contains article metadata and directs it to the OpenURL server of your choice. The OpenURL server can provide access to the resource and also offer complementary services (specific search engine, export of references...). The OpenURL link can be generated by different means.
  • If your librarian has set up your subscription with an OpenURL resolver, OpenURL links appear automatically on the abstract pages.
  • You can define your own OpenURL resolver with your EDPS Account. In this case your choice will be given priority over that of your library.
  • You can use an add-on for your browser (Firefox or I.E.) to display OpenURL links on a page (see http://www.openly.com/openurlref/). You should disable this module if you wish to use the OpenURL server that you or your library have defined.