Determination of the conduction mechanism and extraction of diode parameters of Au/PANI-TiO2/Al Schottky diode
Department of Physics, Faculty of Science, Yazd University, P.O. Box 89195-741, Yazd, Iran
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Revised: 14 February 2013
Accepted: 19 March 2013
Published online: 30 April 2013
Schottky barrier diodes based on a composite of polyaniline with titanium oxide (TiO2) were fabricated using aluminum as a Schottky contact and gold as an ohmic contact. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. The current-voltage characteristics were studied to explain the rectification generation of the diode. The diode shows non-ideal I-V behavior with an ideality factor greater than unity. The conduction mechanism was determined and a Schottky-type conduction process was defined. The diode parameters such as saturation current density and ideality factor were found to be 9.28 x 10−4 A/cm2 and 6.33, respectively.
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