Optical properties of amorphous ZnO thin film prepared from boiled Zn thin film in ultra high pure water
Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
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Revised: 23 April 2012
Accepted: 14 May 2012
Published online: 6 June 2012
Amorphous zinc oxide (a-ZnO) thin films were synthesized from RF sputtered Zn thin films. The conversion was performed by processing Zn thin film in ultra high pure water at 95°C in various process times (120–180 min). X-ray spectra revealed the presence of amorphous ZnO in the processed films. The calculated band gap was laid in between 3.25 and 3.2 eV. Non-linear behavior in I-V characteristics was observed for all films. The structural defects of a-ZnO were confirmed with PL and Raman studies. The synthesized films at 180 min were more oxygen deficient.
© EDP Sciences, 2012