Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
Revised: 4 November 2011
Accepted: 9 November 2011
Published online: 23 December 2011
In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400–1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.
© EDP Sciences, 2011