Low-voltage pentacene field-effect transistors with high mobility and unusual change of the mobility by simple storage*
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan
2 Department of Chemistry, Zhengzhou University, 100 Kexue Avenue, Zhengzhou 450001, P.R. China
Accepted: 21 March 2011
Published online: 18 August 2011
Pentacene field-effect transistors (FETs), fabricated on strontium titanate without self-assembled monolayer, showed mobility as high as 1.9 cm2/V s at operating voltage as low as −3 V. The mobility of the FET was significantly increased to attain 3.3 cm2/V s simply by storage in a desiccator for 1032 h. Based on careful examination of the time dependence of the mobility for the FET devices, it was indicated that the mobility significantly increased in initial stage to several thousand hours and then monotonously decreased beyond then regardless of the initial value of the mobility.
Supplementary material: Figures are available in electronic form at http://www.epjap.org
© EDP Sciences, 2011