Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
Corresponding author: email@example.com
Accepted: 23 May 2008
Published online: 19 June 2008
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH:ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
PACS: 78.66.Fd – III-V semiconductors / 85.60.Jb – Light-emitting devices / 81.65.Cf – Surface cleaning, etching, patterning
© EDP Sciences, 2008