Synthesis of one-dimensional GaN nanorods on Si(111) substrates by magnetron sputtering
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R.
Corresponding author: firstname.lastname@example.org
Revised: 31 July 2006
Accepted: 1 September 2006
Published online: 8 November 2006
GaN nanorods have been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/ZnO films at 950 °C in a quartz tube. The GaN nanorods have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared (FTIR) system and fluorescence spectrophotometer. The results show that the nanorods are pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters ranging from 100 nm to 750 nm, and the growth direction of GaN nanorods is perpendicular to (101) plane. The photoluminescence (PL) spectrum indicates that the good emission property for the nanorods. Finally, the growth mechanism is also briefly discussed.
PACS: 68.65.-k – Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties / 78.30.Fs – III-V and II-VI semiconductors / 81.15.Cd – Deposition by sputtering
© EDP Sciences, 2006