A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet
C/Julio Palacios, 11, 9B, 28029 Madrid, Spain
Revised: 22 October 1998
Accepted: 22 October 1998
Published online: 15 January 1999
A sensitivity factor for electron mobility with respect to the tunnel oxide thickness in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a field-dependent mobility is assumed.
PACS: 85.30.-z – Semiconductor devices / 85.30.De – Semiconductor-device characterization, design, and modeling / 85.30.Mn – Junction breakdown and tunneling devices (including resonance tunneling devices)
© EDP Sciences, 1999