The European Physical Journal Applied Physics

Table of Contents - June 2012 - Volume 58, Issue 03  

Nanomaterials and Nanotechnologies

Fabrication of low-pressure low-voltage field ionization gas sensor using pure and Al-doped ZnO nanowires

N. Haghighia1, Y. Abdia1 and E. Arziaa1 c1

a1 Nanophysics Research Laboratory, Department of Physics, University of Tehran, 1439955961 Tehran, Islamic Republic of Iran

Abstract

Zinc oxide nanowires were synthesized by a simple chemical method using zinc acetate dihydrate, polyvinylpyrrolidone (PVP) and DI water as precursor, capping and solvent, respectively. Aluminum-doped ZnO nanowires were also synthesized by adding AlCl3 during the growth process. Both types of nanowires were used to fabricate a novel field ionization based gas sensor. The high sensitivity in low pressures, low working voltages, very low recovery time and good selectivity are the main advantages of these fabricated sensors. Electrical characteristics of the fabricated sensors were investigated while being exposed to several gases. Scanning electron microscopy (SEM) was used to analyze the nanowires structures.

(Received December 28 2011)

(Revised April 04 2012)

(Accepted May 09 2012)

(Online publication June 06 2012)

Correspondence:

c1 e-mail: arzi@khayam.ut.ac.ir