The European Physical Journal Applied Physics

Table of Contents - December 2011 - Volume 56, Issue 03 (Focus on organic electronic devices)  

Surfaces and Interfaces

Atomic and electronic properties of P/Si(1 1 1)-(2 × 1) surface

Z. Ayduğana1 c1, Ç. Kaderoğlua1, B. Alkana1 and M. Çakmaka2

Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey

Department of Physics, Gazi University, 06500 Ankara, Turkey

Abstract

The atomic and electronic properties of the substitutional phosphorus (P) on the Si(1 1 1)-(2 × 1) surface have been studied by using the ab initio density functional theory (DFT) based on pseudopotential approach. We have considered four different possible binding sites for P adatom in the π-bonded chain labeled sites 1–4 respectively in Figure 1. We have found that the site 1 position in the π-bonded chain was energetically more favorable than the other binding sites, by about 0.1 eV/adatom. We have also calculated the corresponding surface electronic band structure and found one surface state, labeled C, in the fundamental band gap of Si(1 1 1)-(2 × 1) surface. Our calculations show that the P/Si(1 1 1)-(2 × 1) surface has a metallic character in the nature. In order to explain the nature of this surface state in the bonding geometry, we have depicted the total and partial charge density contours plots at the J¯S1286004211201393_eqnU1 point of the surface Brillouin zone (SBZ).

(Received April 06 2011)

(Revised July 29 2011)

(Accepted August 11 2011)

(Online publication November 14 2011)

Correspondence:

c1 e-mail: zaydugan@yahoo.com