The European Physical Journal Applied Physics

Surfaces and Interfaces

Resonant photoemission of rare earth doped GaN thin films

S.R. McHalea1 c1, J.W. McClorya1 c2, J.C. Petroskya1, J. Wua2, R. Palaia2, Ya.B. Losovyja3 and P.A. Dowbena4

Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, OH 45433, USA

Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00931, USA

The J. Bennett Johnston Sr. Center for Advanced Microstructures and Devices, Louisiana State University, 6890 Jefferson Highway, Baton Rouge, LA 70806, USA

Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska, P.O. Box 880299, Lincoln, NE 68588-0299, USA


The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14 occupancy.

(Received May 26 2011)

(Revised June 07 2011)

(Accepted June 21 2011)

(Online publication September 28 2011)


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