The European Physical Journal Applied Physics

Table of Contents - September 2011 - Volume 55, Issue 03  

Semiconductors and Devices

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumia1 c1, S. Saadaouia1, M.M. Ben Salema1, C. Gaquierea2 and H. Maarefa1

Laboratoire de Micro-Optoélectroniques et Nanostructures, Université de Monastir, Tunisia

Institut d’Électronique de Microélectronique et de Nanotechnologie IEMN, Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, France

Abstract

In this work we report on the characteristics of (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques such as capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements were used to characterize the diodes. We observed an hysteresis phenomenon on the C-V characteristics in the Schottky diode. The parasitic effect can be attributed to the presence of traps in the heterostructure. Deep defects analysis was performed by deep-level transient spectroscopy (DLTS). One hole trap have been detected with an activation energy and a capture cross-section of 0.75 eV and 1.093 × 10−11 cm2. The localization and the identification of this trap have occurred and a correlation between the defect and the hysteresis phenomenon has been discussed. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

(Received April 03 2011)

(Accepted May 13 2011)

(Online publication August 18 2011)

Correspondence:

c1 e-mail: gassoumimalek@yahoo.fr