Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, ENIT, BP 37, Le Belvédère 1002, , ENIT, BP 37, Le Belvédère 1002, Tunis, Tunisia
CuIn1- x Al x S2 (CIAS) thin films with different compositions were deposited by the evaporation of the powder of CuIn1- x Al x S2 on to glass substrates heated at 200 °C. The different thin films were obtained with increasing the content aluminium in the powder. Structural, morphological and optical properties of the films were studied in function of the Al content. Polycrystalline CIAS thin films orientated preferentially along the (112) plane were obtained. Then the crystallites have a similar shape as that of all as-deposited films. The incorporation of aluminium atoms moves the main absorption on the left with varied band gap between 1.5 eV and 1.90 eV.
(Received December 9 2010)
(Accepted February 8 2011)
(Online publication April 13 2011)