The European Physical Journal Applied Physics

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Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas

A. Bournela1, P. Dollfusa1, P. Brunoa2 and P. Hestoa1

Institut d'Électronique Fondamentale (CNRS URA22), Université Paris Sud, Bâtiment 220, 91405 Orsay Cedex, France

Max-Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany

Abstract

We report a study of the gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas, using a Monte-Carlo transport model. The precession vector originates from the spin-orbit coupling existing at a III-V hetero-interface, usually denoted as Rashba interaction. Contrary to the case of a one dimensional electron gas, the precession vector is randomized by the scattering events, which leads to a non negligible loss of spin coherence for an initially spin-polarized electron population moving along a conduction channel. However, we show that by operating at the liquid nitrogen temperature, or by reducing the channel width to a value close to 0.1 µm, the gate-controlled spin-polarization remains high enough to enable the investigation of the physics of spin-related phenomena in a ferromagnet/semiconductor structure.

(Received May 29 1998)

(Accepted August 24 1998)

(Online publication October 15 1998)

PACS:

  • 85.90.+h – Other topics in electronic and magnetic devices and microelectronics;
  • 71.70.Ej – Spin-orbit coupling, Zeeman and Stark splitting;
  • 73.40.-c – Electronic transport in interface structures
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