The European Physical Journal Applied Physics

Organic Materials and Devices

Orientation control of rhomboedral PZT thin films on Pt/Ti/SiO2/Si substrates

B. Vilquina1, R. Bouregbaa1, G. Poullaina1, M. Hervieua1 and H. Murraya1

Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France


Highly (111)- and (001)-oriented rhomboedral PZT thin films have been grown at 500 °C on platinized silicon substrates by in situ RF magnetron sputtering. Crystallization of the perovskite phase was possible provided that a thin TiO x buffer layer was deposited prior to the PZT. Control of PZT films orientation is demonstrated by changing the $\rm O_2/(Ar+O_2)$ ratio in the plasma gas during the TiO x sputtering and its consequences on electrical properties of the ferroelectric samples are presented. The structural properties of the TiO x buffer layer were studied by means of transmission electronic microscopy in order to understand the relation between the TiO x seeding and the orientation control of the PZT film.

(Received February 19 2001)

(Revised April 4 2001)

(Accepted June 1 2001)

(Online publication September 15 2001)


  • 81.15.Cd – Deposition by sputtering;
  • 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials;
  • 68.37.Lp – Transmission electron microscopy (TEM) (including STEM, HRTEM, etc.)