Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
Highly (111)- and (001)-oriented rhomboedral PZT thin films have been grown at 500 °C on platinized silicon substrates by in situ RF magnetron sputtering. Crystallization of the perovskite phase was possible provided that a thin TiO x buffer layer was deposited prior to the PZT. Control of PZT films orientation is demonstrated by changing the ratio in the plasma gas during the TiO x sputtering and its consequences on electrical properties of the ferroelectric samples are presented. The structural properties of the TiO x buffer layer were studied by means of transmission electronic microscopy in order to understand the relation between the TiO x seeding and the orientation control of the PZT film.
(Received February 19 2001)
(Revised April 4 2001)
(Accepted June 1 2001)
(Online publication September 15 2001)