The European Physical Journal Applied Physics
- The European Physical Journal Applied Physics / Volume 20 / Issue 03 / December 2002, pp 191-196
- © EDP Sciences, 2002
- Published online by Cambridge University Press: 17 February 2011
- DOI: http://dx.doi.org/10.1051/epjap:2002091 (About DOI)
Laser, Optics, Optoelectronics and Nanophotonics
Stabilization of a 1.55 μm extended-cavity semiconductor laser by intracavity dynamic holography
A. Godarda1a2, G. Pauliata1, G. Roosena1, Ph. Graindorgea2 and Ph. Martina2
Laboratoire Charles Fabry de l'Institut d'Optique (Unité Mixte de Recherche 8501 du CNRS), Bât. 503, Centre Scientifique d'Orsay, BP 147, 91403 Orsay Cedex, France
NetTest, Photonics Division, 45 avenue Jean Jaurès, BP 81, 78344 Les Clayes-sous-Bois, France
Abstract
Commercial grating-tuned single-mode extended-cavity semiconductor lasers (ECLD's) can be tuned over 100 nm around 1.55 μm. This continuous tuning with no mode-hopping requires delicate factory adjustments and a high mechanical stability. These constrains are relaxed by the adjunction of a photorefractive crystal inside the cavity which creates an adaptive spectral filter which decreases the loss of the lasing-mode and thus enhances its stability.
(Received December 11 2001)
(Accepted March 28 2002)
(Online publication November 15 2002)
PACS:
- 42.55.Px – Semiconductor lasers; laser diodes;
- 42.60.-v – Laser optical systems: design and operation;
- 42.65.Hw – Phase conjugation, optical mixing, and photorefractive effect
