Semiconductors and Devices

Influence of an applied electric field on the electronic properties of Si δ-doped GaAs

E. Ozturk^a1, Y. Ergun^a1, H. Sari^a1 and I. Sokmen^a2

Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey

Dokuzeylul University, Department of Physics, Izmir, Turkey

Abstract

We have theoretically studied the electronic structure of Si δ-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence of the electric field on the donor distribution thickness as different from other authors. The present method is based on a self-consistent solution of the Schrödinger and Poisson equations. From our calculations, we have seen that a high applied electric field is significantly changed the subband structure of the δ-doped GaAs and the change of the electronic properties as dependent on the applied electric field is more pronounced at wide doping thickness. The high electric fields can induce a spatial separation between confined electrons and ionized dopants in the δ-doped GaAs structure resulting in enhanced free carrier mobility in semiconductor devices.

(Received February 27 2002)

(Revised June 9 2003)

(Accepted July 24 2003)

(Online publication October 3 2003)

PACS:

• 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

eozturk@cumhuriyet.edu.tr