Institute of Physics, Wroclaw University of Technology Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460 Marcoussis, France
Recombination processes in GaAsN, GaInAsN, and GaAsSbN compounds have been analysed and compared. The following properties like: broad photoluminescence band at energy of ~ 0.85 eV, an emission band aproximately 80 meV below band gap energy, and annealing-induced blue shift of the energy gap have been found for all three compounds. In order to explain these features a simple band gap diagram with N defect-related levels close to conduction band edge and fluctuations in the energy of the conduction band minimum has been proposed.
(Received August 18 2003)
(Accepted January 28 2004)
(Online publication July 15 2004)